欢迎来到上海巨纳科技有限公司网站！欢迎来到上海巨纳科技有限公司网站！
13761090949
相关文章
Related Articles详细介绍
硒化锗晶体 GeSe (Germanium Selenide)
晶体尺寸：~10毫米
电学性能：半导体
晶体结构：斜方晶系
晶胞参数：a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90°
晶体类型：合成
晶体纯度：＞99.995%
X-ray diffraction on a GeSe single crystal aligned along the (100) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8
Powder X-ray diffraction (XRD) of a single crystal GeSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal GeSe by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal GeSe. Measurement was performed with a 785 nm Raman system at room temperature.
产品咨询
联系我们
上海巨纳科技有限公司 公司地址：上海市虹口区宝山路778号海伦国际大厦5楼 技术支持：化工仪器网扫一扫 更多精彩
微信二维码
网站二维码
