InSe 硒化铟晶体（Indium Selenide）

简要描述：InSe （indium selenide） is the first commercially available InSe layered materials in the field.

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更新时间：2024-06-03
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二维材料

其他二维材料二维材料粉末二维材料溶液碲化物晶体硒化物晶体硫化物晶体绝缘体钙钛矿异质结 MOFS材料二维材料薄膜黑磷六方氮化硼查看全部产品

详细介绍

InSe (indium selenide) is the first commercially available InSe layered materials in the field. Our single crystal InSe crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using three different state-of-art techniques: i) Bridgman growth, ii) flux zone growth, and iii) chemical vapor transport (CVT) growth. The latter (CVT) produces contaminated samples. Flux zone technique is suitable for good crystallization but crystal sizes are limited to ~5mm. In contrast, Brigmann method offers good crystallinity as well as large size (larger than 1cm). Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency.
Properties of InSe crystals by 2Dsemiconductors USA