相关文章
Related Articles详细介绍
硫化锗晶体 GeS(Germanium Sulfide)
晶体尺寸:~10毫米
电学性能:半导体
晶体结构:斜方晶系
晶胞参数:a = 1.450, b = 0.364 nm, c = 0.430 nm, α = β = γ = 90°
晶体类型:合成
晶体纯度:>99.995%
X-ray diffraction on a single crystal GeS aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8
Powder X-ray diffraction (XRD) of a single crystal GeS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal GeS by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal GeS. Measurement was performed with a 785 nm Raman system at room temperature.
产品咨询
联系我们
上海巨纳科技有限公司 公司地址:上海市虹口区宝山路778号海伦国际大厦5楼 技术支持:化工仪器网扫一扫 更多精彩
微信二维码
网站二维码