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二硫化钨晶体 2H-WS2(Tungsten Disulfide)
晶体结构：六边形晶体尺寸：~10毫米
电学性能：N型半导体
晶体结构：六边形
晶胞参数：a = b = 0.315 nm, c = 1.227 nm, α = β = 90, γ = 120°
晶体类型：合成
晶体纯度：＞99.995%
X-ray diffraction on a single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10
Powder X-ray diffraction (XRD) of a single crystal 2H-WS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal 2H-WS2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal 2H-WS2. Measurement was performed with a 785 nm Raman system at room temperature.
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