GaS 硫化镓晶体（Gallium Sulfide）

简要描述：Large size hexagonal phase GaTe （Gallium telluride） crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport （CVT）

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更新时间：2024-06-03
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二维材料

其他二维材料二维材料粉末二维材料溶液碲化物晶体硒化物晶体硫化物晶体绝缘体钙钛矿异质结 MOFS材料二维材料薄膜黑磷六方氮化硼查看全部产品

详细介绍

Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport (CVT), and flux zone growth, to optimize grain sizes and reduce defect concentrations. In contrast to commonly used chemical vapor transport (CVT) technique, flux grown crystals are well known for their structural perfection and electronic/optical performance. Bridgman and flux zone methods both offer similar grade qualities. Each crystal very large in size to last for years, is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency.
Properties of monoclinic GaS vdW crystals