Monolayer tungsten disulfide （1H-WS₂） flakes have been exfoliated from bulk tungsten disulfide （2H-WS₂） onto 90nm thermal oxide and measures from 5micron up to 40micron in size.

Monolayer tungsten diselenide （1H-WSe₂） flakes have been exfoliated from bulk tungsten diselenide （2H-WSe₂） onto 90nm thermal oxide and measures from 5micron up to 40micron in size.

Substrate: Sapphire （c-cut） Quartz （Silica） TEM grids （please supply grids） Thermal Oxide （SiO2/Si） Polyethylene terephthalate – PET Substrates

Newly acquired ion implantation accelerator unit allows 2Dsemiconductors USA to create desired amounts of defects by alpha particle irradiation process at select amount of doses.

高纯度黑磷晶体 Black Phosphorus-Crystal 晶体结构：正斜方晶结构晶体尺寸：~10mm 电学性能：半导体 晶体结构：斜方晶系 晶胞参数：a = 0.331 nm, b= 1.048, c = 0.437 nm, α = β = γ = 90° 晶体类型：合成 晶体纯度：99.995% 性质：半导体

黑砷磷/晶体黑磷-砷合金 BP-As alloy （Black Phosphorus-Arsenic Alloy） 晶体尺寸：~mm 电学性能：半导体 晶体结构：斜方晶系 晶胞参数：晶胞参数取决于合金中的成分。p/As比值为1 a = b = 0.338 nm, b = 10.743 nm, c = 0.446 nm, α = β = γ = 90° 晶体类型：合成 晶体纯度：99.995%